march 2006 rev 1 1/8 8 stth312 ultrafast recovery - 1200 v diode main product characteristics features and benefits ultrafast, soft recovery very low conduction and switching losses high frequency and/or high pulsed current operation high reverse voltage capability high junction temperature description the high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. these characteristics make it ideal for heavy duty applications that demand long term reliability. such demanding applications include industrial power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. these diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. the improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device. order codes i f(av) 3 a v rrm 1200 v t j 175 c v f (typ) 1.15 v t rr (typ) 55 ns part number marking STTH312B STTH312B STTH312B-tr STTH312B k a dpak STTH312B k a nc www.st.com
characteristics stth312 2/8 1 characteristics to evaluate the conduction losses use the following equation: p = 1.4 x i f(av) + 0.1 i f 2 (rms) table 1. absolute ratings (limiting values at 25 c, unless otherwise specified) symbol parameter value unit v rrm repetitive peak reverse voltage 1200 v i f(rms) rms forward current 6 a i f(av) average forward current, = 0.5 t c = 150 c 3 a i frm repetitive peak forward current t p = 5 s, f = 5 khz square 35 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal 35 a t stg storage temperature range -65 to + 175 c t j maximum operating junction temperature 175 c table 2. thermal parameter symbol parameter value unit r th(j-c) junction to case 3.8 c/w table 3. static electrical characteristics symbol parameter test conditions min. typ max. unit i r (1) reverse leakage current t j = 25 c v r = v rrm 10 a t j = 125 c 2 100 v f (2) forward voltage drop t j = 25 c i f = 3 a 2 v t j = 125 c 1.20 1.7 t j = 150 c 1.15 1.65 1. pulse test: t p = 5 ms, < 2 % 2. pulse test: t p = 380 s, < 2 %
stth312 characteristics 3/8 table 4. dynamic characteristics symbol parameter test conditions min. typ max. unit t rr reverse recovery time i f = 1 a, di f /dt = -50 a/s, v r = 30 v, t j = 25 c 115 ns i f = 1 a, di f /dt = -100 a/s, v r = 30 v, t j = 25 c 55 80 i rm reverse recovery current i f = 3 a, di f /dt = -200 a/s, v r = 600 v, t j = 125 c 9.5 14 a s softness factor i f = 3 a, di f /dt = -200 a/s, v r = 600 v, t j = 125 c 2 t fr forward recovery time i f = 3 a di f /dt = 50 a/s v fr = 1.5 x v fmax , t j = 25 c 350 ns v fp forward recovery voltage i f = 3 a, di f /dt = 50 a/s, t j = 25 c 12 v figure 1. conduction losses versus average current figure 2. forward voltage drop versus forward current 0 1 2 3 4 5 6 7 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 p(w) t =tp/t tp = 0.05 = 1 i (a) f(av) = 0.1 = 0.2 = 0.5 0 5 10 15 20 25 30 35 40 45 50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 i (a) fm v (v) fm t =25c (maximum values) j t =150c (maximum values) j t =150c (typical values) j figure 3. relative variation of thermal impedance junction to case versus pulse duration figure 4. peak reverse recovery current versus di f /dt (typical values) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-03 1.e-02 1.e-01 1.e+00 z/r th(j-c) th(j-c) t (s) p single pulse 0 2 4 6 8 10 12 14 16 18 20 22 24 0 50 100 150 200 250 300 350 400 450 500 i (a) rm di /dt(a/s) f i =2 x i ff(av) i=i ff(av) i =0.5 x i f f(av) v =600v t =125c r j
characteristics stth312 4/8 figure 5. reverse recovery time versus di f /dt (typical values) figure 6. reverse recovery charges versus di f /dt (typical values) 0 50 100 150 200 250 300 350 400 0 50 100 150 200 250 300 350 400 450 500 t (ns) rr di /dt(a/s) f i =2 x i ff(av) i=i ff(av) i =0.5 x i ff(av) v =600v t =125c r j 0 200 400 600 800 1000 1200 0 50 100 150 200 250 300 350 400 450 500 q (nc) rr di /dt(a/s) f v =600v t =125c r j i =2 x i f f(av) i=i ff(av) i =0.5 x i ff(av) figure 7. softness factor versus di f /dt (typical values) figure 8. relative variations of dynamic parameters versus junction temperature 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 50 100 150 200 250 300 350 400 450 500 s factor di /dt(a/s) f i 2xi t =125c ff(av) j v =600v r 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 25 50 75 100 125 i rm q rr s factor t (c) j i=i reference: t =125c ff(av) j v =600v r t rr figure 9. transient peak forward voltage versus di f /dt (typical values) figure 10. forward recovery time versus di f /dt (typical values) 0 5 10 15 20 25 30 35 40 45 50 55 60 0 25 50 75 100 125 150 175 200 225 250 275 300 v (v) fp di /dt(a/s) f i=i t =125c ff(av) j 0 100 200 300 400 500 600 700 0 100 200 300 400 500 t (ns) fr di /dt(a/s) f i=i t =125c f f(av) j v =1.5 x v max. fr f
stth312 characteristics 5/8 figure 11. junction capacitance versus reverse voltage applied (typical values) figure 12. thermal resistance junction to ambient versus copper surface under tab (printed circuit board fr4, e cu = 35 m) 1 10 100 1 10 100 1000 c(pf) v (v) r f=1mhz v =30mv t =25c osc rms j 0 10 20 30 40 50 60 70 80 90 100 0 5 10 15 20 25 30 35 40 s (cm2) cu r (c/w) th(j-a)
package mechanical data stth312 6/8 2 package mechanical data epoxy meets ul94, v0 cooling method: by conduction (c) figure 13. dpak footprint (dimensions in mm) in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com. table 5. dpak dimensions ref. dimensions millimeters inches min. max min. max. a 2.20 2.40 0.086 0.094 a1 0.90 1.10 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b2 5.20 5.40 0.204 0.212 c 0.45 0.60 0.017 0.023 c2 0.48 0.60 0.018 0.023 d 6.00 6.20 0.236 0.244 e 6.40 6.60 0.251 0.259 g 4.40 4.60 0.173 0.181 h 9.35 10.10 0.368 0.397 l2 0.80 typ. 0.031 typ. l4 0.60 1.00 0.023 0.039 v2 0 8 0 8 h l4 g b l2 e b2 d a1 r r c a c2 0.60 min. v2 a2 6.7 6.7 3 3 1.6 1.6 2.3 2.3
stth312 ordering information 7/8 3 ordering information 4 revision history part number marking package weight base qty delivery mode STTH312B STTH312B dpak 0.30 g 75 tube STTH312B-tr STTH312B dpak 0.30 g 2500 tape & reel date revision description of changes 02-mar-2006 1 first issue.
stth312 8/8 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorize representative of st, st products are not designed, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems, where failure or malfunction may result in personal injury, death, or severe property or environmental damage. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2006 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com
|
